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| CD2315 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG B .112 x 45 A 2 1 2 C D E O.125 NOM. FULL R J .125 FEATURES: * PG = 18 dB min. at 75 W/30 MHz * IMD3 = -30 dBc max. at 75 W (PEP) * OmnigoldTM Metalization System DIM F 3 G HI MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC 10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.05 C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 1 = Collector 2 = Emitter 3 = Base CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V VCE = 25 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz Snd. = -7 dB 10 100 80 13.5 14.5 -55 PREF = 16 W dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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